Multi-layer method for formation of registered arrays of cylindrical pores in polymer films

ABSTRACT

Methods for fabricating sublithographic, nanoscale polymeric microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

TECHNICAL FIELD

Embodiments of the invention relate to methods of fabricating thin filmsof self-assembling block copolymers, and devices resulting from thosemethods.

BACKGROUND OF THE INVENTION

As the development of nanoscale mechanical, electrical, chemical andbiological devices and systems increases, new processes and materialsare needed to fabricate nanoscale devices and components. Makingelectrical contacts to conductive lines has become a significantchallenge as the dimensions of semiconductor features shrink to sizesthat are not easily accessible by conventional lithography. Opticallithographic processing methods have difficulty fabricating structuresand features at the sub-30 nanometer level. The use of self assemblingdiblock copolymers presents another route to patterning at nanoscaledimensions. Diblock copolymer films spontaneously assemble into periodicstructures by microphase separation of the constituent polymer blocksafter annealing, for example by thermal annealing above the glasstransition temperature of the polymer or by solvent annealing, formingordered domains at nanometer-scale dimensions.

The film morphology, including the size and shape of themicrophase-separated domains, can be controlled by the molecular weightand volume fraction of the AB blocks of a diblock copolymer to producelamellar, cylindrical, or spherical morphologies, among others. Forexample, for volume fractions at ratios greater than about 80:20 of thetwo blocks (AB) of a diblock polymer, a block copolymer film willmicrophase separate and self-assemble into a periodic spherical domainswith spheres of polymer B surrounded by a matrix of polymer A. Forratios of the two blocks between about 60:40 and 80:20, the diblockcopolymer assembles into a periodic hexagonal close-packed or honeycombarray of cylinders of polymer B within a matrix of polymer A. For ratiosbetween about 50:50 and 60:40, lamellar domains or alternating stripesof the blocks are formed. Domain size typically ranges from 5-50 nm.

In some applications, the self-assembled films are further processed toselectively remove one of the blocks, leaving the other polymer block asan etch mask on the substrate. However, in some applications, thepolymer block that is removed does not extend completely through thefilm and requires an additional etch of material to expose theunderlying substrate, resulting in a reduction in the aspect ratio ofthe mask openings and the subsequently etched line or other opening inthe substrate.

It would be useful to provide methods of fabricating films of orderednanostructures that can be readily used to in semiconductormanufacturing.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention are described below with reference to thefollowing accompanying drawings, which are for illustrative purposesonly. Throughout the following views, the reference numerals will beused in the drawings, and the same reference numerals will be usedthroughout the several views and in the description to indicate same orlike parts.

FIG. 1 illustrates an elevational, cross-sectional view of the substrateshowing a block copolymer material within trenches in a substrate.

FIG. 2 illustrates a cross-sectional view of the substrate of FIG. 1 ata subsequent stage showing a self-assembled block copolymer filmcomposed of parallel cylinders within the trenches. FIG. 2A is a topplan view of a portion of the substrate of FIG. 2 taken along lines2A-2A.

FIG. 3 illustrates a diagrammatic top plan view of a portion of asubstrate at a preliminary processing stage according to an embodimentof the present disclosure. FIGS. 3A-3B are elevational, cross-sectionalviews of the substrate depicted in FIG. 3 taken along lines 3A-3A and3B-3B, respectively.

FIG. 4 illustrates a top plan view of the substrate of FIG. 3 at asubsequent stage showing the formation of trenches in a material layerformed on a substrate. FIGS. 4A-4B illustrate elevational,cross-sectional views of a portion of the substrate depicted in FIG. 4taken, respectively, along lines 4A-4A and 4B-4B.

FIGS. 5-8 are top plan views of the substrate of FIG. 4 at subsequentstages in the fabrication of a self-assembled block copolymer filmaccording to an embodiment of the disclosure. FIGS. 5A-8A illustrateelevational, cross-sectional views of a portion of the substratedepicted in FIGS. 5-8 taken along lines 5A-5A to 8A-8A, respectively.FIGS. 5B-8B are cross-sectional views of the substrate depicted in FIGS.5-8 taken along lines 5B-5B to 8B-8B, respectively. FIG. 8C is a topplan view of the substrate depicted in FIG. 8A taken along lines 8C-8C.

FIGS. 9-10 are top plan views of the substrate of FIG. 8 at subsequentstages, illustrating an embodiment of the removal of one of the polymerblocks to form a mask to etch the substrate. FIGS. 9A-10A illustrateelevational, cross-sectional views of a portion of the substratedepicted in FIGS. 9-10 taken along lines 9A-9A and 10A-10A,respectively. FIGS. 9B-10B are cross-sectional views of the substratedepicted in FIGS. 9-10 taken along lines 9B-9B to 10B-10B, respectively.

FIG. 11 is a top plan view of the substrate of FIG. 10 at a subsequentstage, illustrating filling of the etched openings in the substrate.FIGS. 11A-11B illustrate elevational, cross-sectional views of a portionof the substrate depicted in FIG. 11 taken along lines 11A-11A and11B-11B, respectively.

DETAILED DESCRIPTION OF THE INVENTION

The following description with reference to the drawings providesillustrative examples of devices and methods according to embodiments ofthe invention. Such description is for illustrative purposes only andnot for purposes of limiting the same.

In the context of the current application, the term “semiconductorsubstrate” or “semiconductive substrate” or “semiconductive waferfragment” or “wafer fragment” or “wafer” will be understood to mean anyconstruction comprising semiconductor material, including but notlimited to bulk semiconductive materials such as a semiconductor wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure including, but not limited to, the semiconductive substrates,wafer fragments or wafers described above.

“L_(o)” as used herein is the inherent periodicity or pitch value (bulkperiod or repeat unit) of structures that self assemble upon annealingfrom a self-assembling (SA) block copolymer. “L_(B)” as used herein isthe periodicity or pitch value of a blend of a block copolymer with oneor more of its constituent homopolymers. “L” is used herein to indicatethe center-to-center cylinder pitch or spacing of cylinders of the blockcopolymer or blend, and is equivalent to “L_(o)” for a pure blockcopolymer and “L_(B)” for a copolymer blend.

FIGS. 1-2 illustrate the fabrication of a self-assembled film from acylindrical-phase block copolymer (e.g., PS-b-P2VP) to form cylindersthat are oriented parallel to the substrate surface. As shown in FIG. 1,a substrate 10 (with active areas 12) is provided with an overlyingmaterial layer 14 that has been etched to form trenches 16 separated byspacers 18. The trenches include sidewalls 20, ends 22 and a floor 24that are preferential wetting to the minority block of the blockcopolymer material, e.g., oxide, etc. The width (w_(t)) of the trenches16 is about 1.5*L and the depth (D_(t)) is about L. The thickness (t) ofthe block copolymer material 26 is about 0.5*L.

As depicted in FIGS. 2-2A, annealing produces a self-assembled film 28composed of parallel cylinders 30 (diameter (d)˜0.5*L) of the minorityblock (e.g., P2VP) embedded within (or surrounded by) a matrix 32 of themajority block (e.g., PS) of the block copolymer material. A brush layer30 a (thickness 0.5*L) forms on the preferential wetting surfaces (e.g.,oxide, etc.) of the trenches and over the surface of the material layer14 as a bilayer composed of the minority block wetting the trenchsurfaces. For example, a layer of P2VP domains will wet oxideinterfaces, with attached PS domains directed away from the oxidematerial.

The resulting film 28 with parallel cylinders 30 can be used, forexample, for patterning lines, but is not useful for fabricating an etchmask for patterning vias. In addition, a thickness of the blockcopolymer material 26 at about 1.5*L is required at the time ofannealing to produce the parallel cylinders as continuous lines.

In embodiments of the invention, a polymer material (e.g., film, layer)is prepared by guided self-assembly of block copolymers, with bothpolymer domains at the air interface. Block copolymer materialsspontaneously assemble into periodic structures by microphase separationof the constituent polymer blocks after annealing, forming ordereddomains at nanometer-scale dimensions. In embodiments of the invention,a cylindrical-phase block copolymer layer with ordered structures isformed as a base layer or film within a trench and used as a template toinduce ordering of a subsequently deposited cylindrical-phase blockcopolymer resulting in a stacked double- or multi-layer structure havingperpendicular-oriented cylinders in a polymer matrix. Following selfassembly, the pattern of perpendicular-oriented cylinders that is formedcan then be used, for example, as an etch mask for patterning nanosizedfeatures (e.g., vias) into the underlying substrate through selectiveremoval of one block of the self-assembled block copolymer.

A method for fabricating a self-assembled block copolymer material thatdefines an array of nanometer-scale, perpendicular-oriented cylindersaccording to an embodiment of the invention is illustrated in FIGS. 3-8.

The described embodiment involves a thermal anneal of acylindrical-phase block copolymer in combination with a graphoepitaxytechnique that utilizes a lithographically defined trench as a guidewith a floor, sidewalls and ends that are preferential wetting to onepolymer block and function as constraints to induce self-assembly of theblock copolymer of the base layer into an ordered one-dimensional (1-D)array of perpendicular-oriented cylindrical domains (“perpendicularcylinders”) within a polymer matrix, and the cylindrical-phase blockcopolymer of the overlying layer into cylinders in a polymer matrixoriented perpendicular and registered to the underlying perpendicularcylinders. In some embodiments, multiple lines of the underlyingperpendicular cylinders can be formed in each trench with the overlyingperpendicular-oriented cylinders.

The term “perpendicular cylinders” used herein is understood to refer tothe structure of the minority block of the base layer within thetrenches, which shape can range from a half-sphere to an elongatedcylinder with a rounded end, and is embedded within (surrounded by) amatrix of the majority block with a face wetting the air interface. Theconditions provided in embodiments of the invention induce anorientational transition relative to the trench floor/substrate fromparallel-oriented cylinders (“surface-parallel” cylinders) toperpendicular-oriented cylinders (“surface-normal” cylinders).

As depicted in FIGS. 3-3B, a substrate 10′ is provided. As furtherillustrated, conductive lines 12′ (or other active area, e.g.,semiconducting regions) are situated within the substrate 10′.

A material layer 14′ (or one or more material layers) is formed over thesubstrate 10′ and etched to form trenches 16′ that are orientedperpendicular to an array of conductive lines 12′, as shown in FIGS.4-4B. Portions of the material layer 14′ form a spacer 18′ outside andbetween the trenches. The trenches 16′ are structured with opposingsidewalls 20′, opposing ends 22′, a floor 24′, a width (w_(t)), a length(l_(t)) and a depth (D_(t)).

In any of the described embodiments, a single trench or multipletrenches can be formed in the material layer 14′, and can span theentire width of an array of lines (or other active area). In embodimentsof the invention, the substrate 10′ is provided with an array ofconductive lines 12′ (or other active areas) at a pitch of L. The trenchor trenches are formed over the active areas 12′ (e.g., lines) such thatwhen the block copolymer material is annealed, each cylinder will besituated above a single active area 12′ (e.g., conductive line). In someembodiments, multiple trenches are formed with the ends 22′ of eachadjacent trench 16′ aligned or slightly offset from each other at lessthan 5% of L such that cylinders in adjacent trenches are aligned andsituated above the same line 12′.

Single or multiple trenches 16′ (as shown) can be formed using alithographic tool having an exposure system capable of patterning at thescale of L (10-100 nm). Such exposure systems include, for example,extreme ultraviolet (EUV) lithography, proximity X-rays and electronbeam (e-beam) lithography, as known and used in the art. Conventionalphotolithography can attain (at smallest) about 58 nm features.

A method called “pitch doubling” or “pitch multiplication” can also beused for extending the capabilities of photolithographic techniquesbeyond their minimum pitch, as described, for example, in U.S. Pat. No.5,328,810 (Lowrey et al.), U.S. Pat. No. 7,115,525 (Abatchev, et al.),US 2006/0281266 (Wells) and US 2007/0023805 (Wells). Briefly, a patternof lines is photolithographically formed in a photoresist materialoverlying a layer of an expendable material, which in turn overlies asubstrate, the expendable material layer is etched to form placeholdersor mandrels, the photoresist is stripped, spacers are formed on thesides of the mandrels, and the mandrels are then removed leaving behindthe spacers as a mask for patterning the substrate. Thus, where theinitial photolithography formed a pattern defining one feature and onespace, the same width now defines two features and two spaces, with thespaces defined by the spacers. As a result, the smallest feature sizepossible with a photolithographic technique is effectively decreaseddown to about 30 nm or less.

Factors in forming a 1-D array of perpendicular cylinders within thetrenches include the width (w_(t)) of the trench, the formulation of theblock copolymer or blend to achieve the desired pitch (L), and the totalvolume or thickness (t₂) of the block copolymer material within thetrench at the end of the anneal at less than 2*L.

The width (w_(t)) of the trench can be varied according to the desirednumber of rows and pattern of perpendicular cylinders. In theillustrated embodiment, the trenches 16′ are constructed with a width(w_(t)) of about 1.5*L (or 1.5× the pitch value) of the block copolymerto form a single row of perpendicular cylinders. A cast block copolymermaterial (or blend) of about L and having a total thickness of less than2*L at the end of anneal will self assemble within the trenches 16′ intoperpendicular cylinders in a single row or line that is aligned with thesidewalls down the center of each trench 16′ with a center-to-centerpitch distance (p) between adjacent perpendicular cylinders at or aboutthe pitch distance or L value of the block copolymer material. Forexample, in using a cylindrical-phase block copolymer with an about 35nm pitch value or L, the width (w_(t)) of the trenches 16′ can be about0.5*35 nm or about 55 nm to form a single row of perpendicular cylinders(each at about 20 nm diameter).

There is a shift from two rows to one row of the perpendicular cylindersas the width (w_(t)) of the trench is decreased and/or the periodicity(L value) of the block copolymer is increased, for example, by forming aternary blend by the addition of both constituent homopolymers. Theboundary conditions of the trench sidewalls 20′ in both the x- andy-axis impose a structure wherein each trench contains “n” number offeatures (e.g., n lines of perpendicular cylinders).

For example, in embodiments of the invention in which a trench has awidth greater than 1.5*L, for example, a width of about 2*L to about2.5*L, a cylindrical-phase block copolymer with a pitch of L and havinga total thickness of less than 2*L at the end of anneal willself-assemble to form perpendicular cylinders in a hexagonal array or azigzag pattern with adjacent cylinders offset by about 0.5*L for thelength (l_(t)) of the trench, rather than a single line row ofperpendicular cylinders each separated by about L (center-to-centerdistance) and aligned with the sidewalls down the center of the trench.For example, a cylindrical-phase block copolymer material having a Lvalue of about 35 nm within a trench having a width of about 2-2.5*L orabout 70-87.5 nm will self assemble to form a hexagonal array ofperpendicular cylinders (about 20 nm diameter) with a center-to-centerpitch distance between adjacent cylinders of about 0.5*L value.

The depth (D_(t)) of the trenches 16′ is effective to direct lateralordering of the block copolymer material during the anneal. Inembodiments of the invention, the depth (D_(t)) of the trenches 16′ isat or less than the final thickness (t₂) of the block copolymer material(D_(t)≦t₂), which minimizes the formation of a meniscus and variabilityin the thickness of the block copolymer material across the trenchwidth. In some embodiments, the trench depth is about 50-90% less, orabout one-half to about two-thirds (about ½-⅔, or about 50%-67%) lessthan the final thickness (t₂) of the block copolymer material within thetrench.

The length (l_(t)) of the trenches 16′ is according to the desirednumber of perpendicular cylinders in a row, and is generally at or aboutn*L or an integer multiple of L, and typically within a range of aboutn*10 to about n*100 nm (with n being the number of features orstructures, e.g., perpendicular cylinders).

The width of the mesas or spacers 18′ between adjacent trenches can varyand is generally about L to about n*L. In some embodiments, the trenchdimension is about 20-100 nm wide (w_(t)) and about 100-25,000 μm inlength (l_(t)) with a depth (D_(t)) of about 10-100 nm.

The trench sidewalls 20′, ends 22′ and floor 24′ are preferentialwetting by a minority block of the block copolymer to induceregistration of cylinders (of the minority block) in a perpendicularorientation to the trench floor as the polymer blocks self-assemble toform the base layer 28′. The substrate 10′ and material layer 14′ can beformed from the same or a highly similar material that is inherentlypreferential wetting to the minority (preferred) polymer block (e.g.,PMMA of a PS-b-PMMA material) or, in other embodiments, a preferentialwetting material can be applied onto the surfaces of the trenches 16′.

To provide preferential wetting surfaces, for example, in the use of aPS-b-PMMA or PS-b-PVP block copolymer, the substrate 10′ and thematerial layer 14′ can be composed of an inherently preferential wettingmaterial such as a clean silicon surface (with native oxide), oxide(e.g., silicon oxide, SiO_(x)), silicon nitride, silicon oxycarbide,indium tin oxide (ITO), silicon oxynitride, and resist materials such asmethacrylate-based resists and polydimethyl glutarimide resists, amongother materials, which exhibit preferential wetting toward the preferredblock (e.g., the minority block) (e.g., PMMA, PVP, etc.). Upon annealingand self assembly of the block copolymer material, the preferred(minority) block (e.g., the PMMA block, PVP block, etc.) will form athin interface layer along the preferential wetting surfaces 20′, 22′,24′ of the trenches.

In other embodiments utilizing PS-b-PMMA, a preferential wettingmaterial such as a polymethylmethacrylate (PMMA) polymer modified withan —OH containing moiety (e.g., hydroxyethyl methacrylate) can beapplied onto the surfaces of the trenches. An OH-modified PMMA can beapplied, for example, by spin coating and then heating (e.g., to about170° C.) to allow the terminal —OH groups to end-graft to oxide surfaces(e.g., sidewalls 20′, ends 22′, floor 24′). Non-grafted material can beremoved by rinsing with an appropriate solvent (e.g., toluene). See, forexample, Mansky et al., Science, 1997, 275, 1458-1460, and In et al.,Langmuir, 2006, 22, 7855-7860.

Referring now to FIGS. 5-5B, a self-assembling, cylindrical-phase blockcopolymer material 26′ having an inherent pitch at or about L_(o) (or aternary blend of block copolymer and homopolymers blended to have apitch at or about L_(B)) is deposited into the trenches 16′ to form abase layer 28′.

Nonlimiting examples of diblock copolymers include, for example,poly(styrene)-b-poly(methylmethacrylate) (PS-b-PMMA) or otherPS-b-poly(acrylate) or PS-b-poly(methacrylate),poly(styrene)-b-poly(vinylpyridine) (PS-b-PVP),poly(styrene)-b-poly(lactide) (PS-b-PLA), andpoly(styrene)-b-poly(tert-butyl acrylate) (PS-b-PtBA),poly(styrene)-b-poly(ethylene-co-butylene (PS-b-(PS-co-PB)),poly(styrene)-b-poly(ethylene oxide) (PS-b-PEO),polybutadiene-b-poly(vinylpyridine) (PB-b-PVP),poly(ethylene-alt-propylene)-b-poly(vinylpyridine) (PEP-b-PVP), andpoly(styrene)-b-poly(dimethylsiloxane) (PS-b-PDMS), among others, withPS-b-PMMA used in the illustrated embodiment. Other types of blockcopolymers (i.e., triblock or multiblock copolymers) can be used.Examples of triblock copolymers include ABC copolymers such aspoly(styrene-b-methyl methacrylate-b-ethylene oxide) (PS-b-PMMA-b-PEO),and ABA copolymers such as PS-PMMA-PS, PMMA-PS-PMMA, and PS-b-PI-b-PS,among others.

In some embodiments of the invention, the block copolymer or blend isconstructed such that the minor domain can be selectively removed.

The L value of the block copolymer can be modified, for example, byadjusting the molecular weight of the block copolymer. The blockcopolymer material can also be formulated as a binary or ternary blendcomprising a block copolymer and one or more homopolymers (HPs) of thesame type of polymers as the polymer blocks in the block copolymer, toproduce a blend that will swell the size of the polymer domains andincrease the L value. The concentration of homopolymers in a blend canrange from 0 to about 60 wt-%. Generally, when added to a polymermaterial, both homopolymers are added to the blend in about the sameratio or amount. An example of a ternary diblock copolymer/homopolymerblend is a PS-b-PVP/PS/PVP blend, for example, 60 wt-% of 32.5 K/12 KPS-b-PVP, 20 wt-% of 10K PS, and 20 wt-% of 10K PVP. Another example ofa ternary diblock copolymer/homopolymer blend is a PS-b-PMMA/PS/PMMAblend, for example, 60 wt-% of 46K/21K PS-b-PMMA, 20 wt-% of 20Kpolystyrene and 20 wt-% of 20K poly(methyl methacrylate). Yet anotherexample is a blend of 60:20:20 (wt-%) of PS-b-PEO/PS/PEO, or a blend ofabout 85-90 wt-% PS-b-PEO and up to 10-15 wt-% PEO homopolymer.

The film morphology, including the domain sizes and periods (L) of themicrophase-separated domains, can be controlled by chain length of ablock copolymer (molecular weight, MW) and volume fraction of the ABblocks of a diblock copolymer to produce cylindrical morphologies (amongothers). For example, in embodiments of the invention, for volumefractions at ratios of the two blocks generally between about 60:40 and80:20, the diblock copolymer will microphase separate and self-assembleinto periodic perpendicular cylinder domains of polymer B within amatrix of polymer A. An example of a cylinder-forming PS-b-PVP copolymermaterial (L_(o)˜28 nm) to form about 14 nm diameter perpendicularcylinder PVP domains in a matrix of PS is composed of about 70 wt-% PSand 30 wt-% PVP with a total molecular weight (M_(n)) of 44.5 kg/mol. Anexample of a cylinder-forming PS-b-PMMA copolymer material (L_(o)=35 nm)to form about 20 nm diameter perpendicular cylinder PMMA domains in amatrix of PS is composed of about 70 wt-% PS and 30 wt-% PMMA with atotal molecular weight (M_(n)) of 67 kg/mol. As another example, aPS-b-PLA copolymer material (L=49 nm) can be composed of about 71 wt-%PS and 29 wt-% PLA with a total molecular weight (M_(n)) of about 60.5kg/mol to form about 27 nm diameter perpendicular cylinder PLA domainsin a matrix of PS.

The block copolymer material can be deposited by spin casting(spin-coating) from a dilute solution (e.g., about 0.25-2 wt % solution)of the block copolymer in an organic solvent such as dichloroethane(CH₂Cl₂) or toluene, for example. Capillary forces pull excess blockcopolymer material 26′ (e.g., greater than a monolayer) into thetrenches 16′. As shown in FIG. 5A, a thin layer or film 26 a′ of theblock copolymer material can be deposited onto the material layer 14′outside the trenches, e.g., on the mesas/spacers 18′. Upon annealing,the thin film 26 a′ (in excess of a monolayer) will flow off themesas/spacers 18′ into the trenches leaving a structureless brush layeron the material layer 14′ from a top-down perspective.

Referring now to FIGS. 6-6B, the block copolymer material 26′ is thenannealed to form the self-assembled base layer 28′.

Upon annealing, the cylindrical-phase block copolymer material (e.g.,PS-b-PMMA) will self-assemble in response to the constraints provided bythe width (w_(t)) of the trench 16′ and the character of thecylindrical-phase block copolymer composition 26′ (e.g., PS-b-PMMAhaving an inherent pitch at or about L) combined with trench surfaces20′, 22′, 24′ that are preferential wetting by the minority or preferredblock of the block copolymer (e.g., the PMMA block), and a totalthickness (t₂) of the BCP material 26′ within the trench of less than2*L at the end of anneal. Enthalpic forces drive the wetting of apreferential-wetting surface by the preferred block (e.g., the minorityblock). In some embodiments in which the width (w) of the trench isgreater than 1.5*L, an ordered hexagonal array of perpendicularcylinders can be formed in each trench.

The resulting base layer 28′ is composed of a monolayer of perpendicularcylinder domains 34′ of the preferred (minority) block (e.g., PMMA)within a matrix 36′ of the majority polymer block (e.g., PS) orientedperpendicular to the trench floor 24′ and registered and alignedparallel to the trench sidewalls 20′ in a row down the middle of eachtrench for the length of the trench and spaced apart at acenter-to-center pitch distance of about L. The face 38′ of theperpendicular cylinders wets the air interface (surface exposed) and theopposing ends 40′ are embedded in (surrounded by) the polymer matrix36′. The diameter (d) of the perpendicular cylinders 34′ will generallybe about one-half of the center-to-center distance (pitch distance, p)between the perpendicular cylinders. Upon annealing, a layer of theminority (preferred) block segregates to and wets the sidewalls 20′,ends 22′ and floor 24′ of the trenches to form a thin brush wettinglayer 34 a′ with a thickness of generally about 0.5*L. The brush layer34 a′ is a bilayer of the minority block domains (e.g., PMMA) wettingtrench (e.g., oxide) interfaces with attached majority block domains(e.g., PS) directed away from the trench surfaces and in contact withthe majority block domains (e.g., PS) of the matrix 36′ at the surfaceof the perpendicular cylinder domains 34′.

The resulting morphology of the annealed polymer material base layer28′, i.e., the perpendicular orientation of the perpendicular cylinders34′, can be examined, for example, using atomic force microscopy (AFM),transmission electron microscopy (TEM), scanning electron microscopy(SEM).

In some embodiments, the self-assembled base layer 28′ is defined by anarray of perpendicular cylinders 34′ in a polymer matrix 36′ and a brushlayer 34 a′ (at about 0.5*L thick), each cylinder 34′ having a roundedend 40′ and a diameter at or about 0.5*L, with the number (n) ofperpendicular cylinders in the row according to the length of thetrench, and the center-to-center distance (pitch distance, p) betweenperpendicular cylinders at or about L.

The block copolymer material 26′ is cast into the trenches 16′ to aninitial thickness (t₁) such that upon completion of inflow of polymermaterial off the mesas/spacers 18′ into the trenches and at the end ofthe anneal, the total volume or thickness (t₂) of the block copolymermaterial 26′ will induce and result in the formation of perpendicularcylinders 34′ in the trench.

In embodiments of the invention, the block copolymer material 26′ withinthe trenches at the end of the anneal has an insufficient volume ofpolymer material to fully form surface parallel cylinders (30) thatwould typically result under the same or similar conditions (e.g., oftrench width (w_(t)), trench depth (D_(t)), block copolymer material atabout L, preferentially wetting trench surfaces). The total volume orthickness (t₂) of the block copolymer (BCP) material 26′ after theanneal is effective to induce a transition from a surface parallel to asurface normal (or perpendicular) orientation of cylindrical domainsrelative to the trench floor/substrate surface. The thickness of theblock copolymer material 26′ can be measured, for example, byellipsometry techniques.

For example, to form the surface parallel cylinder morphology 30 asillustrated in FIGS. 1-2, in the application of a block copolymer (suchas PS-b-P2VP) in which the minority block (e.g., P2VP) is stronglypreferentially wetting to the trench surfaces (e.g., oxide) and themajority block is preferential wetting to the air interface (e.g., PS,which has a lower surface tension, preferentially wets a clean dry airatmosphere), a typical thickness (t) of the block copolymer material 26at the end of the anneal to form a monolayer of parallel cylinders (anda brush layer 30 a) is t=b+L (where b is the thickness of the brushlayer 30 a at about 0.5*L), or t=0.5*L+L=1.5*L.

According to embodiments of the invention, the thickness (t₂) of a blockcopolymer material 26′ such as PS-b-P2VP at the end of the anneal shouldbe sufficiently less than the thickness t=b+L (e.g., t<1.5*L) to resultin a switch in the orientation of the cylinders from surface parallel(FIG. 2, cylinders 30) to perpendicular (or surface normal) (FIG. 6A,cylinders 34′) while retaining the brush layer 34 a′ in contact with thetrench surfaces 20′, 22′, 24′. In addition, the face 38′ of theperpendicular cylinders 34′ wets the air interface and the opposing ends40′ are rounded. In some embodiments, the total volume or thickness (t₂)of a PS-b-P2VP block copolymer material 26′ (or similar polymermaterial) after inflow from the mesas/spacers 18′ and at the end ofanneal is about 5-30% less (or about 10-20% less) than the 1.5*L valueof the block copolymer material, or t₂˜70-95%*(1.5*L). For example, fora PS-b-P2VP block copolymer material where L=35 nm, the PS-b-P2VP blockcopolymer material 26′ can be cast into the trenches 16′ and the polymermaterial 26 a′ caused to flow into the trenches wherein the total volumeor thickness (t₂) of the block copolymer material 26′ at the end ofanneal is [(about 0.70 to about 0.95)*(1.5*35 nm)], or about 36.75-49.9nm thick.

In embodiments utilizing a block copolymer (such as PS-b-PMMA) in whichthe minority block (e.g., PMMA) is preferentially wetting to trenchsurfaces (e.g., oxide) and both the minority block and the majorityblock (e.g., PS) wet the air interface equally well, the typicalthickness (t₂) of the block copolymer material 26 to form a monolayer ofparallel cylinders (over a brush layer 30 a) (FIGS. 1-2) is generallyt₂˜L. According to embodiments of the invention, a film 26′ of a blockcopolymer material such as PS-b-PMMA within the trenches 16′ at the endof anneal should be at less than the L value or t₂<L to result in areorientation of the cylinders from parallel to perpendicular with abrush layer 34 a′ in contact with the trench surfaces 20′, 22′, 24′. Inthis application, the cylinders 34′ have a shorter length and appear ashalf-spheres due to the rounded ends 40′. In some embodiments, the totalvolume or thickness (t₂) of a PS-b-PMMA block copolymer material 26′ (orsimilar material) after inflow from the mesas/spacers 18′ and at the endof anneal is about 5-30% less (or about 10-20% less) than the L value ofthe block copolymer material, or t₂˜70-95%*(1*L). For example, for aPS-b-PMMA block copolymer material where L=35 nm, the PS-b-PMMA blockcopolymer material 26′ can be cast into the trenches 16′ and the polymermaterial 26 a′ caused to flow into the trenches wherein the total volumeor thickness (t₂) of the block copolymer material 26′ after the annealis [(about 0.70 to about 0.95)*(35 nm)], or about 24.5-33.25 nm thick,resulting in surface normal (perpendicular) cylinders 34′ within thetrenches.

In embodiments utilizing a block copolymer material (such as PS-b-PDMS)in which the minority block (e.g., PDMS) preferentially wets both thetrench surfaces and air interface, the typical thickness (t₂) of theblock copolymer material 26 to form a monolayer of parallel cylinders(over a brush layer 30 a) (FIGS. 1-2) is generally t₂=2*L. According toembodiments of the invention, a film 26′ of a block copolymer materialsuch as PS-b-PDMS within trenches 16′ at the end of anneal should have athickness (t₂) of less than about 2*L (or at t₂<2*L) to result in areorientation to perpendicular cylinders 34′ (FIG. 6A) in which thecylinders are perpendicular to the trench floor 24′ with rounded ends40′. In some embodiments, the total volume or thickness (t₂) ofPS-b-PDMS block copolymer material 26′ (or similar material) afteranneal is about 5-30% less (or about 10-20% less) than 2*L value of theblock copolymer material, or t₂˜70-95%*(2*L). For example, for aPS-b-PDMS block copolymer material where L=35 nm, the PS-b-PDMS blockcopolymer material 26′ can be cast into the trenches 16′ and the polymermaterial 26 a′ caused to flow into the trenches wherein the total volumeor thickness (t₂) of the block copolymer material 26′ after the annealis [(about 0.70 to about 0.95)*(2*35 nm)], or about 49-66.5 nm thick.

The polymer material 26′ can be annealed to form the polymer base layer28′, for example, by thermal annealing to above the glass transitiontemperature of the component blocks of the copolymer material to causethe polymer blocks to separate and self assemble in response to thepreferential wetting of the trench surfaces 20′, 22′, 24′. For example,a PS-b-PMMA copolymer film can be annealed at a temperature of about150-275° C. in a vacuum oven for about 1-24 hours to achieve theself-assembled morphology.

The block copolymer material 26′ can be globally heated or, in otherembodiments, a zone or localized thermal anneal can be applied toportions or sections of the block copolymer material 26′. For example,the substrate can be moved across a temperature gradient 42′ (FIG. 6A),for example, a hot-to-cold temperature gradient, positioned above (asshown) or underneath the substrate (or the thermal source can be movedrelative to the substrate, e.g., arrow →) such that the block copolymermaterial self-assembles upon cooling after passing through the heatsource. Only those portions of the block copolymer material that areheated above the glass transition temperature of the component polymerblocks will self-assemble, and areas of the material that were notsufficiently heated remain disordered and unassembled. “Pulling” theheated zone across the substrate can result in faster processing andbetter ordered structures relative to a global thermal anneal.

After the block copolymer material is annealed and ordered, the baselayer (film) 28′ can then be treated to crosslink one of the polymerdomains to fix and enhance the strength of the polymer domain, forexample, the polymer matrix 36′ (e.g., the PS segments to make the PSmatrix insoluble). The polymer block can be structured to inherentlycrosslink (e.g., upon UV exposure) or formulated to contain acrosslinking agent.

Generally, the block copolymer material 26 a′ outside the trenches willnot be thick enough to result in self-assembly. Optionally, theunstructured thin film 26 a′ of the block copolymer material outside thetrenches (e.g., on mesas/spacers 18′) can be removed, as illustrated inFIGS. 6A-6B, for example, by an etch technique or a planarizationprocess. For example, the trench regions can be selectively exposedthrough a reticle (not shown) to crosslink only the annealed andself-assembled polymer material 28′ within the trenches 16′, and a washcan then be applied with an appropriate solvent (e.g., toluene) toremove the non-crosslinked portions of the block copolymer material 26a′ (e.g., on the spacers 18′), leaving the registered self-assembledbase layer 28′ within the trench and exposing the surface (18′) of thematerial layer 14′ above/outside the trenches. In another embodiment,the polymer material 26′ can be crosslinked globally, a photoresistmaterial can be applied to pattern and expose the areas of the polymermaterial 26 a′ outside the trench regions, and the exposed portions ofthe polymer material 26 a′ can be removed, for example by an oxygen (O₂)plasma treatment.

The annealed and self-assembled base film 28′ is then used as a templatefor inducing the ordering of an overlying cylindrical-phase blockcopolymer material such that the cylindrical domains of the annealedsecond film will orient perpendicular and registered to the underlyingpattern of perpendicular cylinders in the base film.

As depicted in FIGS. 7-7B, a cylindrical-phase block copolymer (BCP)material 44′ having an inherent pitch at or about the L value of theblock copolymer material 26′ of the base layer 28′ (or a ternary blendof block copolymer and homopolymers blended to have a pitch at or aboutthe L value) is deposited (e.g., by spin casting) onto the annealed (andcrosslinked) base layer 28′ within the trenches 16′. The block copolymermaterial 44′ can be deposited to a thickness (t₃) at or about its Lvalue. The minority domain of the BCP material 44′ is either identicalto or preferentially wets the perpendicular cylinder (minority) domains34′ of the underlying base layer 28′.

The block copolymer material 44′ is then annealed to form aself-assembled material layer 46′ over the base layer 28′, as depictedin FIGS. 8A-8C. The polymer material 44′ can be annealed, for example,by thermal annealing.

During the anneal, the chemical pattern of the perpendicular cylinder(minor) domains 34′ of the base layer 28′ templates and imposes aninduced ordering effect on the self-assembling cylindrical-phase blockcopolymer material 44′ to form a layer 46′ of perpendicular-orientedcylinders 48′ of the minority (preferred) block (e.g., PMMA) within apolymer matrix 50′ of the majority block (e.g., PS), with the cylindersregistered to the underlying pattern of perpendicular cylinders 34′ ofthe base layer 28′. The diameter of the perpendicular cylinders 48′ isat or about 0.5*L.

In addition, parallel cylinders 30′ embedded in the matrix 50 a′ and abrush layer 30 a′ will form over the preferential wetting material layer14′, as shown in FIGS. 8A-8B.

Intrinsic periods of the two block copolymer materials 26′, 44′ can bematched, for example, through a ternary blend of either or both of thecopolymer materials with one or more homopolymers to adjust the polymerperiods (L values). See, for example, R. Ruiz, R. L. Sandstrom and C. T.Black, “Induced Orientational Order in Symmetric Diblock CopolymerThin-Films,” Advanced Materials, 2007, 19(4), 587-59. In embodiments ofthe method, the same cylindrical-phase block copolymer material is usedfor both block copolymer materials 26′, 44′.

The annealed and self-assembled polymer layer 46′ can then be treated tocross-link one of the polymer segments (e.g., the PS matrix 50′), aspreviously described.

After annealing and ordering of the cylindrical-phase BCP material 44′to form polymer material layer 46′, one of the block components can beselectively removed to produce a porous film that can be used, forexample, as a lithographic template or mask to pattern the underlyingsubstrate 10′ in a semiconductor processing to define a regular patternof nanometer sized openings (i.e., about 10-100 nm).

As illustrated in FIGS. 9-9B, in some embodiments, the cylindricaldomains 48′ and the underlying perpendicular cylinders 34′ of the baselayer 28′ are selectively removed to form a porous film of regularcylindrical-shaped voids or openings 54′ within a polymer matrix 36′,50′ that are registered to the trench sidewalls 20′. For example,selective removal of PMMA domains 34′, 48′ from a cross-linked PS matrix36′, 50′ can be performed, for example, by application of an oxygen (O₂)plasma, or by a chemical dissolution process such as acetic acidsonication by first irradiating the sample (ultraviolet (UV) radiation,1 J/cm^2 254 nm light), then ultrasonicating the film in glacial aceticacid, ultrasonicating in deionized water, and rinsing the film indeionized water to remove the degraded PMMA.

As shown, a portion of the PS matrix 36′ situated underneath theopenings 54′ and over the trench floor 24′ remains after the removal ofthe PMMA domains 34′, 48′. The underlying PS matrix 36′ can be removed,for example, by a reactive ion etch (RIE) using an oxygen plasma, forexample, to expose the underlying substrate 10′ at the trench floor 24′,as illustrated in FIGS. 10-10B. The resulting polymer film 52′ iscomposed of cylindrical openings 54′ within the polymer matrix 36′, 50′(e.g., of PS). The RIE etch may thin the polymer matrix 50′, as shown,although not to a significant extent.

An embodiment of the application of the polymer film 52′ is as an etchmask to form openings in the substrate 10′. For example, as illustratedin FIGS. 10-10B, the polymer film 52′ can then be used as a mask to etch(arrows ↓) a series of cylindrical openings or contact holes 56′ (shownin phantom) to the conductive lines 12′ or other active area (e.g.,semiconducting region, etc.) in the underlying substrate 10′ (or anunderlayer), for example, using a selective RIE plasma etch process.

Further processing can then be performed as desired. For example, asdepicted in FIGS. 11-11B, the residual polymer material 52′ (e.g., 50′,34 a′, 36′) can be removed and the substrate openings 56′ can be filledwith a material 58′ such as a metal or metal alloy such as Cu, Al, W,Si, and Ti₃N₄, among others, to form arrays of cylindrical contacts tothe conductive lines 12′. The cylindrical openings 56′ in the substratecan also be filled with a metal-insulator-metal stack to form capacitorswith an insulating material such as SiO₂, Al₂O₃, HfO₂, ZrO₂, SrTiO₃, andthe like.

Methods of the disclosure provide a means of generating self-assembleddiblock copolymer films composed of perpendicular-oriented cylinders ina polymer matrix. The methods provide ordered and registered elements ona nanometer scale that can be prepared more inexpensively than byelectron beam lithography, EUV photolithography or conventionalphotolithography. The feature sizes produced and accessible by thisinvention cannot be easily prepared by conventional photolithography.Since the domain sizes and periods (L) involved in this method aredetermined by the chain length of a block copolymer (MW), resolution canexceed other techniques such as conventional photolithography.Processing costs using the technique are significantly less than extremeultraviolet (EUV) photolithography, which has comparable resolution. Thedescribed methods and systems can be readily employed and incorporatedinto existing semiconductor manufacturing process flows and provide alow cost, high-throughput technique for fabricating small structures.

Embodiments of the invention eliminate the need for preparing trenchfloors that wet both blocks of a block copolymer to formperpendicular-oriented cylinders from block copolymer materials. Whileforming a neutral wetting trench floor can be accomplished, for example,by forming a neutral wetting material (e.g., random copolymer material)on the trench floor, it requires either processes that are notconventional to semiconductor manufacturing and/or extra processingsteps. The present methods do not require unconventional processes formanufacturing the required structures.

In addition, embodiments of the disclosure providing chemical patterntemplating of the upper layer provide fast processing of BCP materialsrelative to other methods of registering block copolymers such asprocesses that utilize graphoepitaxy with selective/neutral wettingtrench or groove surfaces alone. The present methods provide formationof nanostructures in a manner that is more readily manufacturable.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. This application isintended to cover any adaptations or variations that operate accordingto the principles of the invention as described. Therefore, it isintended that this invention be limited only by the claims and theequivalents thereof. The disclosures of patents, references andpublications cited in the application are incorporated by referenceherein.

What is claimed is:
 1. A method of forming a nanostructured polymermaterial on a substrate, comprising: depositing a block copolymermaterial within a trench in a material layer on the substrate to athickness of about 5-30% less than a thickness of the block copolymermaterial to form surface parallel-oriented cylinders upon annealing, thetrench having a length, and a floor, opposing sidewalls and ends thatare preferentially wetting to a minority block of the block copolymer,and the block copolymer material having an inherent pitch value (L); andannealing the block copolymer material such that said block copolymermaterial self-assembles into a plurality of perpendicular-orientedcylindrical domains of the minority block within a matrix of a secondblock of the block copolymer, the cylindrical domains being aligned withthe sidewalls in a single row for the length of the trench, and saidcylindrical domains having a face exposed at an air interface with theself-assembled block copolymer material and an opposing end embeddedwithin and surrounded by said matrix of the second block.
 2. The methodof claim 1, wherein the thickness of the block copolymer material afterannealing is about 5-30% less than the annealed thickness of the blockcopolymer material to form surface parallel-oriented cylinders.
 3. Themethod of claim 1, wherein the thickness of the block copolymer materialafter annealing is about 10-20% less than the annealed thickness of theblock copolymer material to form surface parallel-oriented cylinders. 4.The method of claim 1, wherein the air interface is preferential wettingto the majority block, and the block copolymer material is formed to athickness of about 5-30% less than 1.5*L value of the block copolymermaterial.
 5. The method of claim 4, wherein the thickness of the blockcopolymer material is about 10-20% less than 1.5*L value of the blockcopolymer material.
 6. The method of claim 4, wherein the blockcopolymer material comprises poly(styrene)-b-poly(vinylpyridine).
 7. Themethod of claim 1, wherein annealing the block copolymer material formsa brush layer on the trench floor comprising a bilayer of the majorityblock domains and the minority block domains with the minority blockdomains wetting the trench floor, and a total thickness of the blockcopolymer material after annealing is about 5-30% less than a combinedthickness of the brush layer on the trench floor and the L value of theblock copolymer material.
 8. The method of claim 1, wherein the airinterface is neutral wetting to the minority block and the majorityblock of the block copolymer material, and the thickness of the blockcopolymer material is about 5-30% less than the L value of the blockcopolymer material.
 9. The method of claim 8, wherein the blockcopolymer material comprises poly(styrene)-b-poly(methylmethacrylate).10. The method of claim 1, wherein the air interface is preferentialwetting to the minority block of the block copolymer material, and thethickness of the block copolymer material after annealing is about 5-30%less than 2*L value of the block copolymer material.
 11. The method ofclaim 10, wherein the block copolymer material comprisespoly(styrene)-b-poly(dimethylsiloxane).
 12. The method of claim 1,wherein the trench has a width of about 1-1.5×L.
 13. A method of forminga nanostructured polymer material on a substrate, comprising: depositinga block copolymer material within a trench in a material layer on thesubstrate, the trench having a length, and a floor, opposing sidewallsand ends that are preferentially wetting to a minority block of theblock copolymer, and the block copolymer material having an inherentpitch value (L) and a total initial thickness of about 5-30% less than atotal initial thickness of the block copolymer material to form surfaceparallel cylinders upon annealing; and annealing the block copolymermaterial such that said block copolymer material self-assembles into aplurality of perpendicular-oriented cylindrical domains of the minorityblock within a matrix of a majority block of the block copolymer suchthat the cylindrical domains are aligned with the sidewalls in a singlerow for the length of the trench, said cylindrical domains having a faceexposed at an air interface with the self-assembled block copolymermaterial and an opposing end embedded in and surrounded by the polymermatrix.
 14. A method of forming a nanostructured polymer material on asubstrate, comprising: annealing a block copolymer material situated ina trench in a material layer overlying the substrate, the trench havinga length, and a floor, opposing sidewalls and ends that arepreferentially wetting to a minority block of the block copolymer, andthe block copolymer material having an inherent pitch value (L) and aninitial total thickness within the trench of about 5-30% less than atotal initial thickness of the block copolymer material to form surfaceparallel cylinders upon annealing; wherein the block copolymer materialforms a plurality of cylindrical domains of the minority block of theblock copolymer oriented perpendicular to the trench floor within amatrix of a majority block of the block copolymer and a layer of theminority polymer block wetting the trench floor, ends and sidewalls, thecylindrical domains being aligned with the sidewalls in a single row forthe length of the trench, and the cylindrical domains comprising a faceexposed at an air interface with the annealed block copolymer materialand an opposing end embedded within and surrounded by said matrix.
 15. Amethod of forming a nanostructured polymer material on a substrate,comprising: depositing a block copolymer material within a trench in amaterial layer on the substrate, the trench having a length, and afloor, opposing sidewalls and ends that are preferentially wetting to aminority block of the block copolymer, and the block copolymer materialhaving an inherent pitch value (L); wherein said forming comprisesflowing said block copolymer material on the material layer outside thetrench into the trench wherein the block copolymer material within thetrench has a total initial thickness of about 5-30% less than a totalinitial thickness of the block copolymer material to form surfaceparallel-oriented cylinders upon annealing; and annealing the blockcopolymer material wherein said block copolymer material self-assemblesinto a plurality of perpendicular-oriented cylindrical domains of theminority block within a matrix of a majority block, the cylindricaldomains being aligned with the sidewalls in a single row for the lengthof the trench, and said cylindrical domains having a face exposed at anair interface with the annealed block copolymer material and an opposingend embedded within and surrounded by said matrix.
 16. A method offorming a nanostructured polymer material on a substrate, comprising:depositing a first cylindrical-phase block copolymer material having aninherent pitch value (L) within a trench in a material layer on thesubstrate to form a base layer, the trench having a length, floor,opposing sidewalls and ends that are preferentially wetting to aminority block of the block copolymer; annealing the block copolymermaterial of the base layer such that said block copolymer material phaseseparates into perpendicular cylindrical domains of the minority blockwithin a matrix of a majority block of the block copolymer such that thecylindrical domains are aligned with the sidewalls in a single row forthe length of the trench, wherein said cylindrical domains have a faceexposed at an air interface with the base layer and an opposing endsurrounded by said matrix; depositing a second cylindrical-phase blockcopolymer material onto the base layer to form an overlayer, wherein thesecond cylindrical-phase block copolymer material comprises a minorityblock that preferentially wets the cylindrical domains of the base layerand has an inherent pitch value (L) at or about the L value of the firstblock copolymer material; and annealing such that said second blockcopolymer material phase separates into cylindrical domains of aminority block within a matrix of a majority block, the cylindricaldomains oriented perpendicular and aligned with and registered to thecylindrical domains of the base layer.
 17. The method of claim 16,wherein the base layer material within the trench has a total thicknessafter annealing less than a thickness of the block copolymer material toform surface parallel cylinders.
 18. The method of claim 17, wherein thebase layer material within the trench has a total thickness afterannealing of about 5-30% less than said thickness of the block copolymermaterial to form surface parallel cylinders.
 19. The method of claim 16,wherein the polymer overlayer has a total thickness at or above its Lvalue.
 20. The method of claim 16, further comprising, after annealingthe second block copolymer material, selectively removing the minoritypolymer blocks to form cylindrical openings extending through theoverlayer and at least partially into the base layer.
 21. The method ofclaim 20, further comprising exposing the substrate through saidcylindrical openings and etching openings in the substrate.
 22. A methodof etching a substrate, comprising: annealing a first block copolymermaterial situated in a trench in a material layer overlying thesubstrate to form a base layer, the trench having a length, floor,opposing sidewalls and ends that are preferentially wetting to aminority block of the first block copolymer, and the first blockcopolymer material having an inherent pitch value (L), wherein the firstblock copolymer material forms perpendicular-oriented cylindricaldomains of the minority polymer block within a matrix of a majoritypolymer block, the cylindrical domains being aligned with the sidewallsin a single row for the length of the trench, and said cylindricaldomains having a face exposed at an air interface with the annealed baselayer and opposing ends within said matrix; depositing a secondcylindrical-phase block copolymer material onto the base layer to forman overlayer; and annealing the overlayer such that said second blockcopolymer material phase separates into cylindrical domains of aminority polymer block within a matrix of a majority polymer block, thecylindrical domains oriented perpendicular and aligned with andregistered to the cylindrical domains of the base layer; selectivelyremoving one of the polymer blocks to form openings extending throughthe overlayer and at least partially into the base layer; removing theremaining base layer within said openings to expose the substrate; andetching exposed portions of the substrate to form openings therein. 23.The method of claim 22, further comprising, after annealing the firstblock copolymer material, selectively crosslinking the polymer matrix ofthe base layer.
 24. The method of claim 22, further comprising, afterannealing the second block copolymer material, selectively crosslinkingthe polymer matrix of the overlayer.
 25. The method of claim 22, whereinremoving the base layer within the openings to expose the substratecomprises a reactive ion etch.
 26. The method of claim 22, furthercomprising filling the openings in the substrate with a fill material.27. The method of claim 26, wherein the fill material comprises a metal,a metal alloy, or a metal/insulator/metal stack.
 28. A method of etchinga substrate, comprising: depositing a first block copolymer materialwithin a trench in a material layer overlying the substrate to form abase layer, the trench having a length and a floor, opposing sidewallsand ends that are preferentially wetting to a minority block of thefirst block copolymer material, and the first block copolymer materialhaving an inherent pitch value (L); causing a microphase separation inthe first block copolymer material of the base layer to formperpendicular-oriented cylindrical domains of the minority polymer blockexposed at an air interface within a matrix of a majority polymer block,the perpendicular domains registered to the sidewalls in a single arrayextending the length of the trench; selectively crosslinking the polymermatrix of the base layer; depositing a second block copolymer materialonto the base layer to form an overlayer; causing a microphaseseparation in the second block copolymer material of the overlayer toform cylindrical domains of a minority polymer block within a matrix ofa majority polymer block, the cylindrical domains oriented perpendicularto the trench floor and registered to the perpendicular domains of thebase layer; selectively removing the cylindrical polymer domains to formopenings through the overlayer and into the base layer; and etchingexposed portions of the substrate to form openings therein.
 29. Themethod of claim 28, wherein the second block copolymer material has aninherent pitch value (L) at or about the L value of the first blockcopolymer material and a total thickness at or above said L value. 30.The method of claim 28, further comprising selectively crosslinking thepolymer matrix of the overlayer prior to selectively removing thecylindrical polymer domains.
 31. The method of claim 1, wherein theannealed block copolymer material within the trench comprises a layer ofthe minority block wetting the trench floor, ends and sidewalls.
 32. Amethod of forming a nanostructured polymer material on a substrate,comprising: depositing a block copolymer material within a trench in amaterial layer on the substrate, the trench having a length, and afloor, opposing sidewalls and ends that are preferentially wetting to afirst block of the block copolymer, and the block copolymer materialhaving an inherent pitch value (L); and annealing the block copolymermaterial to form a plurality of perpendicular-oriented cylinders of thefirst block within a matrix of a second block of the block copolymer anda brush layer of the first block wetting the floor, sidewalls and endsof the trench, said cylinders aligned with the sidewalls in a single rowfor the length of the trench, and said cylinders having a face exposedat an air interface and an opposing end embedded within and surroundedby said matrix of the second block.
 33. The method of claim 31, whereinthe block copolymer material is deposited to a thickness within thetrench of about 5-30% less than 1.5-2*L.
 34. The method of claim 31,wherein the block copolymer material is deposited to a thickness withinthe trench of about 5-30% less than L.
 35. The method of claim 31,wherein the block copolymer material is deposited to a thickness suchthat at the end of annealing, the thickness is about 5-30% less than2*L.